Rainbow-electronics AT28BV256 Bedienungsanleitung

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1
Features
Single 2.7V - 3.6V Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64 Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1- to 64-byte Page Write Operation
Low Power Dissipation
15 mA Active Current
20 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV256 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmels advanced nonvolatile CMOS technology, the device offers access
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,
the CMOS standby current is less than 200
µA.
256K (32K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV256
Rev. 0273G11/99
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE
Chip Enable
OE Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Dont Connect
PDIP, SOIC
Top V i e w
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top V i e w
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note: PLCC package pins 1 and 17
are DONT CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
A14
DC
VCC
WE
A13
(continued)
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Inhaltsverzeichnis

Seite 1 - Pin Configurations

1Features• Single 2.7V - 3.6V Supply• Fast Read Access Time – 200 ns• Automatic Page Write Operation– Internal Address and Data Latches for 64 Bytes–

Seite 2

AT28BV25610Note: 1. See Valid Part Numbers table below.Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby200 1

Seite 3

AT28BV25611Packaging Information.045(1.14) X 45˚PIN NO. 1IDENTIFY.025(.635) X 30˚ - 45˚.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4).03

Seite 4

© Atmel Corporation 1999.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Seite 5

AT28BV2562The AT28BV256 is accessed like a Static RAM for the reador write cycle without the need for external components.The device contains a 64-byt

Seite 6

AT28BV2563Device OperationREAD: The AT28BV256 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory locati

Seite 7

AT28BV2564Notes: 1. X can be VIL or VIH.2. Refer to AC programming waveforms.3. VH = 12.0V ± 0.5V.DC and AC Operating RangeAT28BV256-20 AT28BV256-25Op

Seite 8

AT28BV2565AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be d

Seite 9

AT28BV2566Note: 1. NR = No Restriction.AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddr

Seite 10 - AT28BV256

AT28BV2567Programming AlgorithmNotes for software program code:1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex).2. Data protect state

Seite 11

AT28BV2568Notes: 1. These parameters are characterized and not 100% tested.2. See “AC Read Characteristics” on page 5.DATA Polling WaveformsNotes: 1.

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