
1Features• Single 2.7V - 3.6V Supply• Fast Read Access Time – 200 ns• Automatic Page Write Operation– Internal Address and Data Latches for 64 Bytes–
AT28BV25610Note: 1. See Valid Part Numbers table below.Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby200 1
AT28BV25611Packaging Information.045(1.14) X 45˚PIN NO. 1IDENTIFY.025(.635) X 30˚ - 45˚.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4).03
© Atmel Corporation 1999.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa
AT28BV2562The AT28BV256 is accessed like a Static RAM for the reador write cycle without the need for external components.The device contains a 64-byt
AT28BV2563Device OperationREAD: The AT28BV256 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory locati
AT28BV2564Notes: 1. X can be VIL or VIH.2. Refer to AC programming waveforms.3. VH = 12.0V ± 0.5V.DC and AC Operating RangeAT28BV256-20 AT28BV256-25Op
AT28BV2565AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be d
AT28BV2566Note: 1. NR = No Restriction.AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddr
AT28BV2567Programming AlgorithmNotes for software program code:1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex).2. Data protect state
AT28BV2568Notes: 1. These parameters are characterized and not 100% tested.2. See “AC Read Characteristics” on page 5.DATA Polling WaveformsNotes: 1.
AT28BV2569
Kommentare zu diesen Handbüchern