Rainbow-electronics AT28BV64B Bedienungsanleitung

Stöbern Sie online oder laden Sie Bedienungsanleitung nach Lager Rainbow-electronics AT28BV64B herunter. Rainbow Electronics AT28BV64B User Manual Benutzerhandbuch

  • Herunterladen
  • Zu meinen Handbüchern hinzufügen
  • Drucken
  • Seite
    / 12
  • Inhaltsverzeichnis
  • LESEZEICHEN
  • Bewertet. / 5. Basierend auf Kundenbewertungen
Seitenansicht 0
1
Features
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
15 mA Active Current
–20 µA CMOS Standby Current
Fast Read Access Time - 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64 Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64 Byte Page Write Operation
DATA Polling for End of Write Detection
High-reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20
µA.
64K (8K x 8)
Battery-Voltage
Parallel EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
Rev. 0299F–05/28/99
3-Volt, 64K
E
2
PROM with
Data Protection
Pin Configurations
Pin Name Function
A0 - A12 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
NC
DC
VCC
WE
NC
(continued)
Seitenansicht 0
1 2 3 4 5 6 ... 11 12

Inhaltsverzeichnis

Seite 1 - Battery-Voltage

1Features• Single 2.7V to 3.6V Supply• Hardware and Software Data Protection• Low Power Dissipation– 15 mA Active Current–20 µA CMOS Standby Current•

Seite 2

AT28BV64B10Note: 1. See Valid Part Number table below.Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby200 15

Seite 3

AT28BV64B11Packaging Information32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters)JEDEC STANDARD MS-016 AE28P6,

Seite 4

© Atmel Corporation 1999.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Seite 5

AT28BV64B2The AT28BV64B is accessed like a static RAM for the reador write cycle without the need for external components.The device contains a 64 byt

Seite 6

AT28BV64B3Device OperationREAD: The AT28BV64B is accessed like a static RAM.When CE and OE are low and WE is high, the data storedat the memory locati

Seite 7

AT28BV64B4Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.3. VH = 12.0V ± 0.5V.DC and AC Operating RangeAT28BV64B-20 AT28BV64B-25Op

Seite 8

AT28BV64B5AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be d

Seite 9

AT28BV64B6Notes: 1. NR = No Restriction2. All byte write operations must be preceded by the SDP command sequence.AC Write WaveformsWE ControlledCE Con

Seite 10 - AT28BV64B

AT28BV64B7Write Algorithm(1)Notes for software program code:1. Data Format: I/O7 - I/O0 (Hex); Address Format: A12 - A0 (Hex).2. Data protect state wi

Seite 11

AT28BV64B8Software Data Protection Write Cycle Waveforms(1)(2)(3)Notes: 1. A0 - A12 must conform to the addressing sequence for the first three bytes

Seite 12 - 0299F–05/28/99/xM

AT28BV64B9Notes: 1. These parameters are characterized and not 100% tested.2. See AC Read Characteristics.Toggle Bit WaveformsNotes: 1. Toggling eithe

Kommentare zu diesen Handbüchern

Keine Kommentare