Rainbow-electronics AT29C257 Bedienungsanleitung

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AT29C257
Features
Fast Read Access Time - 70 ns
5-Volt-Only Reprogramming
Page Program Operation
Single Cycle Reprogram (Erase and Program)
Internal Address and Data Latches for 64-Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Program Cycle Times
Page (64-Byte) Program Time - 10 ms
Chip Erase Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
300 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Pin-Compatible with AT29C010A and AT29C512 for Easy System Upgrades
Description
The AT29C257 is a 5-volt-only in-system Flash programmable and erasable read only
memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-
cess times to 70 ns with power dissipation of just 275 mW. When the device is dese-
lected, the CMOS standby current is less than 300 µA. The device endurance is such
that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C257 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from a static RAM.
Reprogramming the AT29C257 is performed on a page basis; 64-bytes of data are
loaded into the device and then simultaneously programmed. The contents of the
entire device may be erased by using a 6-byte software code (although erasure before
programming is not needed).
During a reprogram cycle, the address locations and 64-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the page and then program the
latched data using an internal control timer. The end of a program cycle can be de-
tected by
DATA polling of I/O7. Once the end of a program cycle has been detected
a new access for a read, program or chip erase can begin.
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
256K (32K x 8)
5-volt Only
CMOS Flash
Memory
PLCC Top View
0012K
AT29C257
4-105
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Inhaltsverzeichnis

Seite 1 - Pin Configurations

AT29C257Features•Fast Read Access Time - 70 ns•5-Volt-Only Reprogramming•Page Program OperationSingle Cycle Reprogram (Erase and Program)Internal Addr

Seite 2

PAUSE 10 mSLOAD DATA 90TOADDRESS 5555LOAD DATA 55TOADDRESS 2AAALOAD DATA AATOADDRESS 5555Notes for software product identification: 1. Data Format: I

Seite 3

AT29C257 4-115

Seite 4

Ordering InformationtACC(ns)ICC (mA)Ordering Code PackageOperation RangeActive Standby70 50 0.3 AT29C257-70JC 32J Commercial(0° to 70°C)50 0.3AT29C257

Seite 5

Block DiagramDevice OperationREAD: The AT29C257 is accessed like a static RAM.When CE and OE are low and WE is high, the data storedat the memory l

Seite 6

HARDWARE DATA PROTECTION: Hardware featuresprotect against inadvertent programs to the AT29C257 inthe following ways: (a) VCC sense— if VCC is below

Seite 7

Operating ModesMode CE OE WE Ai I/O Read VILVILVIHAi DOUTProgram (2)VILVIHVILAi DIN5V Chip Erase VILVIHVILAiStandby/Write Inhibit VIH X (1)X X High ZW

Seite 8

AC Read CharacteristicsAT29C257-70 AT29C257-90 AT29C257-12 AT29C257-15Symbol ParameterMin Max Min Max Min Max Min MaxUnitstACCAddress to Output Delay

Seite 9

AC Byte Load CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddress, OE Set-up Time 0 nstAHAddress Hold Time 50 nstCSChip Select Set-up Time 0

Seite 10 - AT29C257

Program Cycle CharacteristicsSymbol Parameter Min Max UnitstWCWrite Cycle Time 10 mstASAddress Set-up Time 0 nstAHAddress Hold Time 50 nstDSData Set-u

Seite 11

Software Protected Program Cycle Waveform (1, 2, 3)Notes: 1. A6 through A14 must specify the page address during each high to low transition of WE (or

Seite 12

Toggle Bit Characteristics (1)Symbol Parameter Min Typ Max UnitstDHData Hold Time 0 nstOEHOE Hold Time 10 nstOEOE to Output Delay (2)nstOEHPOE High Pu

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