
AT29C257Features•Fast Read Access Time - 70 ns•5-Volt-Only Reprogramming•Page Program OperationSingle Cycle Reprogram (Erase and Program)Internal Addr
PAUSE 10 mSLOAD DATA 90TOADDRESS 5555LOAD DATA 55TOADDRESS 2AAALOAD DATA AATOADDRESS 5555Notes for software product identification: 1. Data Format: I
AT29C257 4-115
Ordering InformationtACC(ns)ICC (mA)Ordering Code PackageOperation RangeActive Standby70 50 0.3 AT29C257-70JC 32J Commercial(0° to 70°C)50 0.3AT29C257
Block DiagramDevice OperationREAD: The AT29C257 is accessed like a static RAM.When CE and OE are low and WE is high, the data storedat the memory l
HARDWARE DATA PROTECTION: Hardware featuresprotect against inadvertent programs to the AT29C257 inthe following ways: (a) VCC sense— if VCC is below
Operating ModesMode CE OE WE Ai I/O Read VILVILVIHAi DOUTProgram (2)VILVIHVILAi DIN5V Chip Erase VILVIHVILAiStandby/Write Inhibit VIH X (1)X X High ZW
AC Read CharacteristicsAT29C257-70 AT29C257-90 AT29C257-12 AT29C257-15Symbol ParameterMin Max Min Max Min Max Min MaxUnitstACCAddress to Output Delay
AC Byte Load CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddress, OE Set-up Time 0 nstAHAddress Hold Time 50 nstCSChip Select Set-up Time 0
Program Cycle CharacteristicsSymbol Parameter Min Max UnitstWCWrite Cycle Time 10 mstASAddress Set-up Time 0 nstAHAddress Hold Time 50 nstDSData Set-u
Software Protected Program Cycle Waveform (1, 2, 3)Notes: 1. A6 through A14 must specify the page address during each high to low transition of WE (or
Toggle Bit Characteristics (1)Symbol Parameter Min Typ Max UnitstDHData Hold Time 0 nstOEHOE Hold Time 10 nstOEOE to Output Delay (2)nstOEHPOE High Pu
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