Rainbow-electronics DS1220AB_AD Bedienungsanleitung PDF herunterladen

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DS1220AB/AD

16K Nonvolatile SRAM

DS1220AB/AD

100495 1/10

FEATURES

• 10 years minimum data retention in the absence of

external power

• Data is automatically protected during power loss

• Directly replaces 2K x 8 volatile static RAM or

EEPROM

• Unlimited write cycles

• Low-power CMOS

• JEDEC standard 24–pin DIP package

• Read and write access times as fast as 100 ns

• Lithium energy source is electrically disconnected to

retain freshness until power is applied for the first time

• Full +10% V

operating range (DS1220AD)

• Optional +5% V

operating range (DS1220AB)

• Optional industrial temperature range of -40°C to

+85°C, designated IND

PIN ASSIGNMENT

12 13

A10

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

GND

24-PIN ENCAPSULATED PACKAGE

720 MIL EXTENDED

PIN DESCRIPTION

-A

– Address Inputs

-DQ

– Data In/Data Out

– Chip Enable

WE – Write Enable

OE – Output Enable

– Power (+5V)

GND – Ground

DESCRIPTION

The DS1220AB and DS1220AD are 16,384-bit, fully

static, nonvolatile SRAMs organized as 2048 words by

8 bits. Each NV SRAM has a self-contained lithium en-

ergy source and control circuitry which constantly moni-

tors V

for an out-of-tolerance condition. When such a

condition occurs, the lithium energy source automati-

cally switches on and write protection is unconditionally

enabled to prevent data corruption. The NV SRAMs can

be used in place of existing 2K x 8 SRAMs directly con-

forming to the popular bytewide 24-pin DIP standard.

The devices also match the pinout of the 2716 EPROM

and the 2816 EEPROM, allowing direct substitution

while enhancing performance. There is no limit on the

number of write cycles that can be executed and no ad-

ditional support circuitry is required for microprocessor

interfacing.

1 2 3 4 5 6 7 8 9

Inhaltsverzeichnis

Seite 1 - 16K Nonvolatile SRAM

Seite 2 - FRESHNESS SEAL

DS1220AB/AD100495 2/103READ MODEThe DS1220AB and DS1220AD execute a read cyclewhenever WE (Write Enable) is inactive (high) and CE(Chip Enable) and OE

Seite 3 - 100495 3/10

DS1220AB/AD100495 3/104ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground -0.3V to +7.0VOperating Temperature 0°C to 70°C; -40°C to +85°C

Seite 4 - See Note 10) (V

DS1220AB/AD100495 4/105(VCC=5.0V + 10% for DS1220AD)AC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC=5.0V + 5% for DS1220AB)PARAMETER SYMBOLDS122

Seite 5 - 100495 5/10

DS1220AB/AD100495 5/106AC ELECTRICAL CHARACTERISTICS (cont’d)PARAMETER SYMBOLDS1220AB–150DS1220AD–150DS1220AB–200DS1220AD–200UNITS NOTESPARAMETERSYMBO

Seite 6 - WRITE CYCLE 2

DS1220AB/AD100495 6/107ADDRESSESCEOEDOUTtRCVIHVILVIHVILVIHVILtOHtODtODVIHVIHVILVIHVIHVILtACCtCOtOEtCOEtCOEOUTPUTDATA VALIDVOHVOLVOHVOLREAD CYCLESEE NO

Seite 7

DS1220AB/AD100495 7/108POWER-DOWN/POWER-UP CONDITION3.2VDATA RETENTION TIMEVCCtFtPDtRtRECCEtDRLEAKAGE CURRENTIL SUPPLIED FROMLITHIUM CELLVTPPOWER-DOWN

Seite 8 - ORDERING INFORMATION

DS1220AB/AD100495 8/1097. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers re-main in a hig

Seite 9

DS1220AB/AD100495 9/1010DS1220AB/AD NONVOLATILE SRAM, 24-PIN 720 MIL EXTENDED MODULEA24–PINPKGDIM MIN MAXIN.MMB IN.MMC IN.MMD IN.MME IN.MMF IN.MMG IN.

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Rainbow-electronics DS1220AB_AD Bedienungsanleitung

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