Rainbow-electronics TSM10P06 Bedienungsanleitung PDF herunterladen

TSM10P06

60V P-Channel MOSFET

1/4

Version: B13

252

(DPAK)

PRODUCT SUMMARY

(V) R

DSON

(mΩ) I

(A)

-60

170 @ V

= -10V -5

220 @ V

= -4.5V -2

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

Packing

TSM10P06CP ROG

TO-252 2.5Kpcs / 13” Reel

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating

= 25

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

-60 V

Gate-Source Voltage V

±20 V

Continuous Drain Current I

-10 A

Pulsed Drain Current I

-20 A

Continuous Source Current (Diode Conduction)

a,b

-10 A

Single Pulse Avalanche Energy (Note 2) E

5 mJ

Avalanche Current I

-10 A

Total Power Dissipation @ T

=25C P

DTOT

37 W

Operating Junction Temperature T

+150

Operating Junction and Storage Temperature Range T

, T

STG

- 55 to +150

Thermal Performance

Parameter Symbol Limit Unit

Junction to Case Thermal Resistance RӨ

C/W

Junction to Ambient Thermal Resistance (PCB mounted) RӨ

C/W

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

Block Diagram

P-Channel MOSFET

Definition

1. Gate

2. Drain

3. Source

1 2 3 4

TSM10P06 1

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TSM10P06 60V P-Channel MOSFET

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TSM10P06 60V P-Channel MOSFET

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