Rainbow-electronics DS1642 Bedienungsanleitung Seite 1

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1 of 11 080499
FEATURES
§ Integrated NV SRAM, real time clock,
crystal, power fail control circuit and lithium
energy source
§ Standard JEDEC bytewide 2K x 8 static RAM
pinout
§ Clock registers are accessed identically to the
static RAM. These registers are resident in the
eight top RAM locations
§ Totally nonvolatile with over 10 years of
operation in the absence of power
§ Access times of 70 ns and 100 ns
§ Quartz accuracy ±1 minute a month @ 25°C,
factory calibrated
§ BCD coded year, month, date, day, hours,
minutes, and seconds with leap year
compensation valid up to 2100
§ Power-fail write protection allows for ±10%
V
CC
power supply tolerance
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A10 - Address Input
CE
- Chip Enable
OE
- Output Enable
WE
- Write Enable
V
CC
- +5 Volts
GND - Ground
DQ0-DQ7 - Data Input/Output
ORDERING INFORMATION
DS1642-70 70 ns access
DS1642-100 100 ns access
DESCRIPTION
The DS1642 is a 2K x 8 nonvolatile static RAM and a full-function real time clock which are both
accessible in a bytewide format. The nonvolatile time keeping RAM is pin- and function-equivalent to
any JEDEC standard 2K x 8 SRAM. The device can also be easily substituted in ROM, EPROM and
EEPROM sockets, providing read/write nonvolatility and the addition of the real time clock function. The
real time clock information resides in the eight uppermost RAM locations. The RTC registers contain
year, month, date, day, hours, minutes, and seconds data in 24-hour BCD format. Corrections for the day
of the month and leap year are made automatically. The RTC clock registers are double-buffered to avoid
access of incorrect data that can occur during clock update cycles. The double-buffered system also
DS1642
Nonvolatile Timekeeping RAM
www.dalsemi.com
V
CC
A8
A9
WE
OE
A10
A7
A6
A5
A4
A3
A2
A1
A0
GND
CE
1
2
3
4
5
6
7
8
9
10
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12
24
23
22
21
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Inhaltsverzeichnis

Seite 1 - Nonvolatile Timekeeping RAM

1 of 11 080499FEATURES§ Integrated NV SRAM, real time clock,crystal, power fail control circuit and lithiumenergy source§ Standard JEDEC bytewide 2K

Seite 2 - DS1642 TRUTH TABLE Table 1

DS164210 of 11AC TEST CONDITIONSOutput Load: 100 pF + 1TTL GateInput Pulse Levels: 0.0 to 3.0 VoltsTiming Measurement Reference Levels:Input: 1.5VOutp

Seite 3

DS164211 of 11DS1642 24-PIN PACKAGEPKG 24-PINDIM. MIN MAXA IN.MM1.27037.340.29037.85B IN.MM0.67517.150.70017.78C IN.MM0.3158.000.33578.51D IN.MM0.0751

Seite 4 - BATTERY LONGEVITY

DS16422 of 11prevents time loss as the timekeeping countdown continues unabated by access to time register data. TheDS1642 also contains its own power

Seite 5

DS16423 of 11SETTING THE CLOCKThe 8th bit of the control register is the write bit. Setting the write bit to a 1, like the read bit, haltsupdates to t

Seite 6 - READ CYCLE TIMING DIAGRAM

DS16424 of 11RETRIEVING DATA FROM RAM OR CLOCKThe DS1642 is in the read mode whenever WE (write enable) is high, and CE (chip enable) is low. Thedevic

Seite 7

DS16425 of 11ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground –0.3V to +7.0VOperating Temperature 0°C to 70°CStorage Temperature –20°C t

Seite 8 - , CONTROLLED

DS16426 of 11READ CYCLE, AC CHARACTERISTICS (0°C to 70°C; VCC = 5.0V ± 10%)70 ns access 100 ns accessPARAMETER SYMBOLMIN MAX MIN MAXUNITS NOTESRead Cy

Seite 9 - = 25°C)

DS16427 of 11WRITE CYCLE, AC CHARACTERISTICS (0°C to 70°C; VCC = 5.0V ± 10%)70 ns access 100 ns accessPARAMETER SYMBOLMIN MAX MIN MAXUNITS NOTESWrite

Seite 10 - AC TEST CONDITIONS

DS16428 of 11WRITE CYCLE TIMING DIAGRAM, WRITE-ENABLE CONTROLLEDWRITE CYCLE TIMING DIAGRAM, CE, CONTROLLED

Seite 11 - DS1642 24-PIN PACKAGE

DS16429 of 11POWER-UP/DOWN AC CHARACTERISTICS (0°C to 70°C)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESCE or WE at VIHBefore Power-downtPD0 µsVCC Fall Tim

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