
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
) 6.0V
Enable Input Voltage (DE) −0.3V to (V
CC
+ 0.3V)
Current Select Voltage
(ISEL) −0.3V to (V
CC
+ 0.3V)
Receiver Select Voltage
(RSEL) −0.3V to (V
CC
+ 0.3V)
Bus Pin Voltage (DO/RI
±
) −0.3V to +3.9V
Driver Short Circuit Current Continuous
ESD (HBM 1.5 kΩ, 100 pF)
>
2kV
Maximum Package Power Dissipation at 25˚C
SOIC 970 mW
Derate SOIC Package
above 25˚C 8mW/˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec.) 260˚C
Recommended Operating
Conditions
Min Max Units
Supply Voltage (V
CC
) 3.0 3.6 V
Receiver Input Voltage 0.0 2.9 V
Operating Free Air Temperature −40 +85 ˚C
DC Electrical Characteristics
T
A
= −40˚C to +85˚C unless otherwise noted, V
CC
= 3.3V
±
0.3V (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential
Voltage
R
L
=27Ω
Figure 1
Isel = 0V
DO+,
DO−
170 220 280 mV
∆V
OD
VOD Magnitude
Change
210mV
V
OS
Offset Voltage 1.0 1.25 1.6 V
∆V
OS
Offset Magnitude
Change
10 20 mV
V
OD
Output Differential
Voltage
R
L
= 100Ω
Figure 1
Isel = 3.3V
250 360 480 mV
∆V
OD
VOD Magnitude
Change
210mV
V
OS
Offset Voltage 0.9 1.25 1.6 V
∆V
OS
Offset Magnitude
Change
10 20 mV
I
OZD
TRI-STATE
®
Leakage V
O
=V
CC
or GND,
DE=0
±
1
±
10 µA
I
OXD
Power-Off Leakage V
O
= 2.9V or GND,
V
CC
=0V
±
1
±
10 µA
I
OSD
Output Short Circuit
Current
ISEL = V
CC
V
O
=0V
−11 −13 mA
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
TH
Input Threshold High RI+, RI− +100 mV
V
TL
Input Threshold Low −100 mV
I
IN
Input Current V
IN
= +2.9V, or 0V, V
CC
=3.6Vor0V
−10
±
1 +10 µA
DEVICE CHARACTERISTICS
V
IH
Minimum Input High
Voltage
DE0,
DE1,
RSEL,
ISEL0,
ISEL1
2.0 V
CC
V
V
IL
Maximum Input Low
Voltage
GND 0.8 V
I
IH
Input High Current V
IN
=V
CC
or 2.4V
±
1
±
10 µA
I
IL
Input Low Current V
IN
= GND or 0.4V
±
1
±
10 µA
V
CL
Input Diode Clamp
Voltage
I
CLAMP
= −18 mA −1.5 −0.8 V
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