Rainbow-electronics MAX17000 Bedienungsanleitung PDF herunterladen (Seite 4)

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

4 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS (continued)

= 12V, V

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, T

= 0°C to +85°C, unless otherwise noted.

Typical values are at T

= +25°C.) (Note 1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

REFERENCE BUFFER (VTTR)

VTT

= ±1mA -10 +10

VTTR Output Accuracy (Adj) REFIN to VTTR

VTT

= ±3mA -20 +20

VTT

= ±1mA -10 +10

VTTR Output Accuracy (Preset) V

CSL

/2 to VTTR

VTT

= ±3mA -20 +20

VTTR Maximum

Recommended Current

Source/sink 5 mA

FAULT DETECTION (SMPS)

SMPS OVP and PGOOD1

Upper Trip Threshold

12 15 18 %

SMPS OVP and PGOOD1

Upper Trip Threshold

Fault-Propagation Delay

OVP

FB forced 25mV above trip threshold 10 μs

SMPS Output Undervoltage

Fault-Propagation Delay

UVP

200 μs

SMPS PGOOD1 Lower Trip

Threshold

Measured at FB, hysteresis = 25mV -12 -15 -18 %

PGOOD1 Lower Trip Threshold

Propagation Delay

PGOOD1

FB forced 50mV below PGOOD1 trip

threshold

10 μs

PGOOD1 Output Low Voltage I

SINK

= 3mA 0.4 V

PGOOD1 Leakage Current I

PGOOD1

FB = 1V (PGOOD1 high impedance),

PGOOD1 forced to 5V, T

= +25°C

1 μA

TON POR Threshold V

POR(IN)

Rising edge, PWM disabled below this level;

hysteresis = 200mV

3.0 V

FAULT DETECTION (VTT)

PGOOD2 Upper Trip Threshold Hysteresis = 25mV 8 10 13 %

PGOOD2 Lower Trip Threshold Hysteresis = 25mV -13 -10 -8 %

PGOOD2 Propagation Delay t

PGOOD2

VTTS forced 50mV beyond PGOOD2

trip threshold

10 μs

PGOOD2 Fault Latch Delay

VTTS forced 50mV beyond PGOOD2

trip threshold

5 ms

PGOOD2 Output Low Voltage I

SINK

= 3mA 0.4 V

PGOOD2 Leakage Current I

PGOOD2

VTTS = V

REFIN

(PGOOD2 high impedance),

PGOOD2 forced to 5V, T

= +25°C

1 μA

FAULT DETECTION

Thermal-Shutdown Threshold T

SHDN

Hysteresis = 15°C160 °C

Undervoltage Lockout

Threshold

UVLO(VCC)

Rising edge, IC disabled below this level

hysteresis = 200mV

3.8 4.1 4.4 V

CSL Discharge MOSFET OVP = V

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