20
4856E–AUTO–07/07
ATA6823 [Preliminary]
4.12
Leakage current at
ground loss
Control unit disconnected
from ground
Loss of local ground must
not affect communication
in the residual network
GND
Device
= VS
V
BAT
=12V
0V < V
BUS
< 18V
8I
BUS_NO_gnd
–1 1 mA
4.13
Node has to sustain the
current that can flow
under this condition. Bus
must remain operational
under this condition
V
BAT
disconnected
V
SUP_Device
= GND
0V < V
BUS
< 18V
8I
BUS
100 µA
4.14
Center of receiver
threshold
V
BUS_CNT
=
(V
th_dom
+V
th_rec
)/2
8V
BUS_CNT
0.475 VS 0.5 VS 0.525 VS V
4.15 Receiver dominant state V
EN
= 5V 8 V
BUSdom
0.4 VS V
4.16 Receiver recessive state V
EN
= 5V 8 V
BUSrec
0.6 VS V
4.17 Receiver input hysteresis V
HYS
= V
th_rec
– V
th_dom
8V
BUShys
0.1 VS 0.175 VS V
4.18
Dominant time for
wake-up via LIN-bus
V
LIN
= 0V 8 T
BUS
30 90 150 µs D
5 Control Inputs EN1, DIR, PWM, WD, TX
5.1
Input low-voltage
threshold
V
IL
0.3 ×
V
VCC
VA
5.2
Input high-voltage
threshold
V
IH
0.7 ×
V
VCC
VA
5.3 Hysteresis
(6)
HYS 0.7 A
5.4 Pull-down resistor EN1, DIR, PWN, WD R
PD
25 50 100 kΩ D
5.5 Pull-up resistor TX R
PU
25 50 100 kΩ D
5.6 Rise/fall time t
rf
100 ns D
5.7 Debounce time EN1
(6)
t
db
2 × T
100
3 × T
100
µs D
6Charge Pump
6.1 Charge pump voltage Load = 0A 21 VCP
V
VBAT
+ V
VG
VA
6.2 Charge pump voltage
Load = 3 mA,
C
CP
= 100 nF
21 VCP
V
VBAT
+ V
VG
– 1
VA
9. Electrical Characteristics (Continued)
All parameters given are valid for 7V ≤ VBAT ≤ 18V and for –40°C ≤ϑambient ≤ 125°C unless stated otherwise.
No. Parameters Test Conditions Pin Symbol Min Typ Max Unit Type*
* Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. EN, DIR, PWM = high
2. The use of X7R material is recommended
3. For higher values, stability at zero load is not guaranteed
4. Tested during qualification only
5. Value depends on T
OSC
; function tested with digital test pattern
6. Tested during characterization only
7. Supplied by charge pump
8. See section “Cross Conduction Time”
9. Voltage between source-drain of external switching transistors in active case
10. The short-circuit message will never be generated for switch-on time < t
sc
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