Rainbow-electronics AT28C16 Bedienungsanleitung

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1
Features
Fast Read Access Time - 150 ns
Fast Byte Write - 200
µs or 1 ms
Self-Timed Byte Write Cycle
Internal Address and Data Latches
Internal Control Timer
Automatic Clear Before Write
Direct Microprocessor Control
–DATA POLLING
Low Power
30 mA Active Current
–100
µA CMOS Standby Current
High Reliability
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
5V
±
10% Supply
CMOS & TTL Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
16K (2K x 8)
Parallel
EEPROMs
AT28C16
Rev. 0540B–10/98
Pin Configurations
Pin Name Function
A0 - A10 Addresses
CE
Chip Enable
OE Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC
Top View
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
NC
NC
DC
VCC
WE
NC
(continued)
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Inhaltsverzeichnis

Seite 1 - Parallel

1Features•Fast Read Access Time - 150 ns•Fast Byte Write - 200 µs or 1 ms•Self-Timed Byte Write Cycle– Internal Address and Data Latches– Internal Con

Seite 2 - Absolute Maximum Ratings*

AT28C1610Packaging Information.045(1.14) X 45°PIN NO. 1IDENTIFY.025(.635) X 30° - 45°.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4).030(

Seite 4 - Operating Modes

© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Seite 5 - (1)(2)(3)(4)

AT28C162The AT28C16 is accessed like a static RAM for the read orwrite cycles without the need of external components. Dur-ing a byte write, the addre

Seite 6 - AC Write Characteristics

AT28C163Device OperationREAD:The AT28C16 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory location de

Seite 7 - Data Polling Characteristics

AT28C164Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.3. VH = 12.0V ± 0.5VDC and AC Operating RangeAT28C16-15Operating Temperatur

Seite 8

AT28C165AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be del

Seite 9 - Die Products

AT28C166AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Typ Max UnitstAS, tOESAddress, OE Set-up Time 10 nstA

Seite 10 - Packaging Information

AT28C167Notes: 1. These parameters are characterized and not 100% tested.2. See AC Characteristics.Data Polling WaveformsChip Erase WaveformstS = tH =

Seite 11

AT28C168

Seite 12 - 0540B–10/98/xM

AT28C169Notes: 1. See Valid Part Numbers table below.2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and

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