
DS1680
18 of 23
3-WIRE INTERFACE CHARACTERISTICS (0°C to +70°C; V
CC
= 3.3V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS
NOTES
Data to Clock Setup t
DC
150 ns 8
CLK to Data Hold t
CDH
210 ns 8
CLK to Data Delay t
CDD
600 ns 8, 9, 10
CLK to Low Time t
CL
750 ns 8
CLK to High Time t
CH
750 ns 8
CLK Frequency t
CLK
0.667 MHz 8
CLK Rise and Fall t
R
, t
F
1500 ns
CS to CLK Setup t
CC
3
µs
8
CLK to CS Hold t
CCH
750 ns 8
CS Inactive Time t
CWH
3
µs
8
CS to I/O High-Z t
CDZ
210 ns 8
ADC CHARACTERISTICS (0°C to +70°C; V
CC
, V
AVD
= 5.0V ± 10%)
PARAMETER SYMBOL
MIN TYP MAX UNITS
NOTES
Resistance of Digitizer Film R
D
250 600 1000 Ω
Resistance of On-Chip Driver R
DRIVER
12 25 Ω
Parasitic Capacitance Between X-
and Y-Plates of Digitizer
C
XY
5 10 nF
Ladder Resistance R
REF
8 25 60 kΩ
ADC Active Current I
AVDA
450 650 µA 5
ADC Standby Current I
AVDS
120 200 µA 6
Reference Current I
REF
200 650 µA
Input Leakage (AIN0, AIN1) I
LI
10 nA
Analog Input Capacitance C
IN
10 15 pF
Resolution 10 Bits
Differential Nonlinearity E
DL
±0.5 ±1.0 LSB
Integral Nonlinearity E
IL
±0.5 ±1.0 LSB
Offset Error E
OS
±1.0 ±1.5 LSB
Gain Error E
G
±0.25 ±1.0 %
ADC Clock Frequency F
OSCIN
5.0 MHz
Multiplexer Selector Path
Propagation Delay
t
MUX
60 ns
COEN Falling Edge to Data Bus
Driven
t
OEA
40 ns
COEN Rising Edge to Data Bus
High-Z
t
OEZ
40 ns
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